Datasheet4U Logo Datasheet4U.com

IDD06SG60C - Schottky Diode

Features

  • Revolutionary semiconductor material - Silicon Carbide.
  • Switching behavior benchmark.
  • No reverse recovery / No forward recovery.
  • Temperature independent switching behavior.
  • High surge current capability.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IDD06E60 Fast Recovery Rectifier INCHANGE
IDD05U DC - DC CONVERTER 5 ~ 6W SINGLE & DUAL OUTPUT Chinfa Electronics Ind
IDD10U DC - DC CONVERTER Chinfa Electronics
IDDD04G65C6 650V SiC Schottky Diode Infineon
IDDD06G65C6 650V SiC Schottky Diode Infineon

Other Datasheets by Infineon

Part Number Description
IDD06E60 Fast Switching Emitter Controlled Diode
IDD03E60 Fast Switching Emitter Controlled Diode
IDD03SG60C Schottky Diode
IDD04E120 Fast Switching EmCon Diode
IDD04S60C Schottky Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
3rd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior • High surge current capability • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Breakdown voltage tested at 20mA2) • Optimized for high temperature operation • Lowest Figure of Merit QC/IF Product Summary VDC QC IF; TC< 130 °C thinQ! 3G Diode designed for fast switching applications like: • SMPS e.g.; CCM PFC • Motor Drives; Solar Applications; UPS IDD06SG60C 600 V 8 nC 6A Type IDD06SG60C Package PG-TO252-3 Marking D06G60C Pin 1 n.c.
Published: |