H20R1202 Datasheet | Infineon

Features : - Powerful monolithic Body Diode with very low forward voltage - Body diode clamps negative voltages ® - Trench Stop and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) - Low EMI 1 - Qualified according to JEDEC for target applications - Pb-free lead plating; Ro HS pliant - plete product spectrum and PSpice Models : http://.infineon./igbt/ Applications: - Inductive Cooking - Soft Switching Applications Type IHW20N120R2 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area (VCE ≤ 1200V, Tj ≤ 175°C) Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Diode surge non repetitive current, tp limited by Tjmax TC = 25°C, tp = 10ms, sine halfwave TC = 25°C, tp ≤ 2.5µs, sine halfwave TC = 100°C, tp ≤ 2.5µs, sine halfwave Gate-emitter voltage Transient Gate-emitter voltage (tp < 5 ms) Power dissipation TC = 25°C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Ptot Tj Tstg IFpul s IFSM Symbol VCE IC Value 1200 40 20 60 60 40 20 30 50 130 120 ±20 ±25 330 -40...+175 -55...+175 260 W °C V Unit V A VCE 1200V IC 20A VCE(sat),Tj=25°C 1.55V Tj,max 175°C Marking H20R1202 Package PG-TO-247-3-21 PG-TO-247-3-21 ICpul s IF J-STD-020 and JESD-022 1 Rev. 1.2 July 06 Power Semiconductors IHW20N120R2 Soft Switching Series Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Diode thermal resistance, junction - case Thermal resistance, junction - ambient Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B...