BTM7755G 3g equivalent, high current h-bridge trilith ic 3g.
* Integrated high current H-Bridge
* Path resistance of max. 295 mΩ @ 150 °C (typ. 150 mΩ @ 25 °C)
* Low quiescent current of typ. 5µA @ 25 °C
* Curre.
It contains two p-channel highside MOSFETs and two n-channel lowside MOSFETs with an integrated driver IC in one packag.
and Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Supply Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
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