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BSC0904NSI - 30V Power MOSFET

General Description

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Key Features

  • Optimized SyncFET for high performance buck converter.
  • Integrated monolithic Schottky-like diode.
  • Very low on-resistance RDS(on) @ VGS=4.5 V.
  • 100% avalanche tested.
  • Superior thermal resistance.
  • N-channel.
  • Qualified according to JEDEC1) for target.

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BSC0904NSI MOSFET OptiMOSTMPower-MOSFET,30V Features •OptimizedSyncFETforhighperformancebuckconverter •IntegratedmonolithicSchottky-likediode •Verylowon-resistanceRDS(on)@VGS=4.5V •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 30 V RDS(on),max 3.7 mΩ ID 78 A QOSS 12 nC QG(0V..10V) 17 nC SuperSO8 8 7 65 56 78 1 23 4 4321 S1 8D S2 7D S3 6D G4 5D Type/OrderingCode BSC0904NSI Package PG-TDSON-8 Marking 0904NSI RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.