which frequencies are as high as 24 GHz. Feature list
* Low inductance LS = 0.2 nH (typical)
* Low capacitance C.

This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, small forward voltage and low junction capacitance make BAT24-02LS a suitable choice for.

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts