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Infineon Technologies Electronic Components Datasheet

SPB17N80C2 Datasheet

Power Transistor

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Preliminary data
SPP17N80C2
SPB17N80C2
Cool MOS™ Power Transistor
COOLMOS
Feature
Power Semiconductors
· New revolutionary high voltage technology
Product Summary
· Worldwide best RDS(on) in TO 220
· Ultra low gate charge
VDS 800 V
WRDS(on) 290 m
· Periodic avalanche rated
· Extreme dv/dt rated
m· Ultra low effective capacitances
o· Improved noise immunity
ID
P-TO263-3-2
17 A
P-TO220-3-1
t4U.cType
SPP17N80C2
eSPB17N80C2
Package
P-TO220-3-1
P-TO263-3-2
Ordering Code
Q67040-S4353
Q67040-S4354
Marking
SPP17N80C2
SPB17N80C2
heMaximum Ratings, at Tj = 25 °C, unless otherwise specified
SParameter
Symbol
taContinuous drain current
aTC = 25 °C
TC = 100 °C
ID
.DPulsed drain current, tp limited by Tjmax
wAvalanche energy, single pulse
ID=4A, VDD=50V
ID puls
EAS
wwAvalanche energy, repetitive tAR limited by Tjmax1)
EAR
Value
17
11
51
670
0.5
Unit
A
mJ
ID=17A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
IAR
17 A
Reverse diode dv/dt
dv/dt
6 V/ns
IS=17A, VDS < VDD, di/dt=100A/µs, Tjmax=150°C
Gate source voltage
Power dissipation
TC = 25 °C
Operating and storage temperature
Page 1
VGS
Ptot
Tj , Tstg
±20 V
-55.2..0+8w15w0w.2D0a0t0a-W°0SC5h-2e9et4U.com


Infineon Technologies Electronic Components Datasheet

SPB17N80C2 Datasheet

Power Transistor

No Preview Available !

www.DataSheet4U.com
Preliminary data
SPP17N80C2
SPB17N80C2
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 2)
Linear derating factor
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
Symbol
Values
Unit
min. typ. max.
RthJC
RthJA
RthJA
Tsold
- - 0.6 K/W
- - 62
- - 62
- 35 -
- - 1.67 W/K
- - 260 °C
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Static Characteristics
Drain-source breakdown voltage
VGS=0V, ID=0.25mA
V(BR)DSS 800
-
Drain-source avalanche breakdown voltage
VGS=0V, ID=17A
V(BR)DS - 870
Gate threshold voltage, VGS = VDS
ID=1mA
Zero gate voltage drain current
VDS = 800 V, VGS = 0 V, Tj = 25 °C
VDS = 800 V, VGS = 0 V, Tj = 150 °C
VGS(th)
2
3
IDSS
- 0.5
--
Gate-source leakage current
VGS=20V, VDS=0V
Drain-source on-state resistance
VGS=10V, ID=11A, Tj=25°C
Gate input resistance
f = 1 MHz, open drain
IGSS
--
RDS(on) - 250
RG - 0.7
-V
-
4
µA
25
250
100 nA
290 mW
-W
1Repetitve avalanche causes additional power losses that can be calculated asPAV=EAR*f.
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
2000-05-29


Part Number SPB17N80C2
Description Power Transistor
Maker Infineon
Total Page 11 Pages
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