SIGC41T120R3E igbt equivalent, igbt.
* 600V Trench & Field Stop technology
* low turn-off losses
* short tail current
* positive temperature coefficient
* easy paralleling
SIGC41T120R3E.
* drives
C G
E
Chip Type
VCE
IC
SIGC41T120R3E 1200V 35A
Die Size 6.5 x 6.37 mm2
Package sawn on foil
Mechan.
AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883
Revision History Version 2.2 2.3
Subjects (major changes since last revision) Wafer diameter change to 200 mm
Additional.
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