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SIGC41T120R3E Datasheet, Infineon

SIGC41T120R3E igbt equivalent, igbt.

SIGC41T120R3E Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 166.49KB)

SIGC41T120R3E Datasheet

Features and benefits


* 600V Trench & Field Stop technology
* low turn-off losses
* short tail current
* positive temperature coefficient
* easy paralleling SIGC41T120R3E.

Application


* drives C G E Chip Type VCE IC SIGC41T120R3E 1200V 35A Die Size 6.5 x 6.37 mm2 Package sawn on foil Mechan.

Description

AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version 2.2 2.3 Subjects (major changes since last revision) Wafer diameter change to 200 mm Additional.

Image gallery

SIGC41T120R3E Page 1 SIGC41T120R3E Page 2 SIGC41T120R3E Page 3

TAGS

SIGC41T120R3E
IGBT
Infineon

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