SIGC32T120R3E igbt equivalent, igbt.
* 1200V Trench + Field Stop technology
* low turn-off losses
* short tail current
* positive temperature coefficient
* easy paralleling
This chip is.
* drives
Chip Type
VCE
IC
SIGC32T120R3E 1200V 25A
Die Size 6.5 x 4.87 mm2
C
G E
Package sawn on foil
Mechani.
AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883
Revision History Version 2.2 2.3
Subjects (major changes since last revision) Wafer diameter change to 200 mm
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