logo

SIGC158T170R3E Datasheet, Infineon

SIGC158T170R3E igbt equivalent, igbt.

SIGC158T170R3E Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 161.63KB)

SIGC158T170R3E Datasheet
SIGC158T170R3E
Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 161.63KB)

SIGC158T170R3E Datasheet

Features and benefits


* 1700V Trench & Field Stop technology
* low turn-off losses
* short tail current
* positive temperature coefficient
* easy paralleling This chip is.

Application


* drives Chip Type VCE IC Die Size SIGC158T170R3E 1700V 125A 12.57 x 12.57 mm2 C G E Package sawn on foil Me.

Description

AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version 2.1 2.2 Subjects (major changes since last revision) Change wafer size to 200 mm Additional bas.

Image gallery

SIGC158T170R3E Page 1 SIGC158T170R3E Page 2 SIGC158T170R3E Page 3

TAGS

SIGC158T170R3E
IGBT
Infineon

Manufacturer


Infineon (https://www.infineon.com/)

Related datasheet

SIGC158T170R3

SIGC158T120R3

SIGC158T120R3E

SIGC158T120R3L

SIGC158T120R3LE

SIGC156T120R2C

SIGC156T120R2CL

SIGC156T120R2CQ

SIGC156T120R2CS

SIGC156T60NR2C

SIGC156T60SNR2C

SIGC15T60

SIGC15T60E

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts