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SIGC101T170R3E Datasheet, Infineon

SIGC101T170R3E igbt equivalent, igbt.

SIGC101T170R3E Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 168.97KB)

SIGC101T170R3E Datasheet

Features and benefits


* 1700V Trench & Field Stop technology
* low turn-off losses
* short tail current
* positive temperature coefficient
* easy paralleling This chip is.

Application


* drives Chip Type VCE IC Die Size SIGC101T170R3E 1700V 75A 10.03 x 10.03 mm2 C G E Package sawn on foil Mec.

Description

AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version Subjects (major changes since last revision) 2.1 Change wafer size to 200 mm 2.2 Additional ba.

Image gallery

SIGC101T170R3E Page 1 SIGC101T170R3E Page 2 SIGC101T170R3E Page 3

TAGS

SIGC101T170R3E
IGBT
Infineon

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