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PVI5080NSPbF - Photovoltaic Isolator

Download the PVI5080NSPbF datasheet PDF. This datasheet also covers the PVI5080NPbF variant, as both devices belong to the same photovoltaic isolator family and are provided as variant models within a single manufacturer datasheet.

Description

The PVI Series Photovoltaic Isolator generates an electrically isolated DC voltage upon receipt of a DC input signal.

It is capable of directly driving gates of power MOSFETs or IGBTs.

It utilizes a monolithic integrated circuit photovoltaic generator of novel construction as its output.

Features

  •  Isolated Voltage Source.
  •  Monolithic Construction.
  •  Up to 8A Output.
  •  Single Output.
  •  Solid-State Reliability Part Identification PVI5080NPbF PVI5080NSPbF thru-hole Surface-mount (gull-wing) 1 2017-12-05 PVI5080NPbF/PVI5080NSPbF Electrical Specifications (-40°C TA  +85°C unless otherwise specified) INPUT.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PVI5080NPbF-Infineon.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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PVI5080NS Photovoltaic Isolator International Rectifier
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PVI5000S Residential/Commercial Grid-Tied Photovoltaic Inverter INSTALLATION AND OPERATION MANUAL Solectria
PVI5013 PHOTOVOLTAIC ISOLATOR International Rectifier

Other Datasheets by Infineon

Part Number Description
PVI5080NPbF Photovoltaic Isolator
PVI5050N Photovoltaic Isolator
PVI5050NPbF Photovoltaic Isolator
PVI1050N Photovoltaic Isolator
PVI1050NPbF Photovoltaic Isolator

Full PDF Text Transcription

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General Description The PVI Series Photovoltaic Isolator generates an electrically isolated DC voltage upon receipt of a DC input signal. It is capable of directly driving gates of power MOSFETs or IGBTs. It utilizes a monolithic integrated circuit photovoltaic generator of novel construction as its output. The output is controlled by radiation from a GaAlAs light emitting diode (LED), which is optically isolated from the photovoltaic generator. The PVI Series is ideally suited for applications requiring high-current and/or high-voltage switching with optical isolation between the low-level driving circuitry and high-energy or high-voltage load circuits. It can be used for directly driving gates of power MOSFETs.
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