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PVI1050NSPbF - Photovoltaic Isolator

Download the PVI1050NSPbF datasheet PDF. This datasheet also covers the PVI1050NPbF variant, as both devices belong to the same photovoltaic isolator family and are provided as variant models within a single manufacturer datasheet.

General Description

The PVI Series Photovoltaic Isolator generates an electrically isolated DC voltage upon receipt of a DC input signal.

It is capable of directly driving gates of power MOSFETs or IGBTs.

It utilizes a monolithic integrated circuit photovoltaic generator of novel construction as its output.

Key Features

  •  Isolated Voltage Source.
  •  Monolithic Construction.
  •  Up to 5A Output.
  •  Single or Dual Output.
  •  Solid-State Reliability Part Identification PVI1050NPbF PVI5050NPbF PVI1050NSPbF PVI5050NSPbF PVI1050NS-TPbF thru-hole thru-hole Surface-mount (gull-wing) Surface-mount (gull-wing) Surface-mount, tape and reel 1 2017-12-05 PVI1050NPbF/PVI1050NS/TPbF PVI5050NPbF/PVI5050NSPbF Electrical Specifications (-40°C TA  +85°C unless otherwise specified) INPUT.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PVI1050NPbF-Infineon.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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General Description The PVI Series Photovoltaic Isolator generates an electrically isolated DC voltage upon receipt of a DC input signal. It is capable of directly driving gates of power MOSFETs or IGBTs. It utilizes a monolithic integrated circuit photovoltaic generator of novel construction as its output. The output is controlled by radiation from a GaAlAs light emitting diode (LED), which is optically isolated from the photovoltaic generator. The PVI Series is ideally suited for applications requiring high-current and/or high-voltage switching with optical isolation between the low-level driving circuitry and high-energy or high-voltage load circuits. It can be used for directly driving gates of power MOSFETs.