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PTRA093302FC - Thermally-Enhanced High Power RF LDMOS FET

General Description

The PTRA093302FC is a 330-watt LDMOS FET with an asymmetric design intended for use in multi-standard cellular power amplifier applications in the 746 MHz to 768 MHz frequency band.

Key Features

  • include dual-path design, input matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTRA093302FC Package H-37248-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 400 mA, ƒ = 768 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 24 60 Efficiency 20 40 16 20 Gain 12 0 8 PAR @ 0.01% CCDF 4 -20 -40 0 25.

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Datasheet Details

Part number PTRA093302FC
Manufacturer Infineon
File Size 158.68 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTRA093302FC Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PTRA093302FC Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 330 W, 50 V, 746 – 768 MHz Description The PTRA093302FC is a 330-watt LDMOS FET with an asymmetric design intended for use in multi-standard cellular power amplifier applications in the 746 MHz to 768 MHz frequency band. Features include dual-path design, input matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTRA093302FC Package H-37248-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 400 mA, ƒ = 768 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.