PTFA241301F Datasheet Thermally-Enhanced High Power RF LDMOS FET

Manufacturer: Infineon

Download the PTFA241301F datasheet PDF. This datasheet also includes the PTFA241301E variant, as both parts are published together in a single manufacturer document.

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PTFA241301F thermally-enhanced high power rf ldmos fet by Infineon - Datasheet Preview — Note: The manufacturer provides a single datasheet file (PTFA241301E-Infineon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	PTFA241301F
Manufacturer	Infineon
File Size	237.18 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTFA241301F Datasheet

General Description

The PTFA241301E and PTFA241301F are thermally-enhanced 130-watt, internally matched GOLDMOS ® FETs intended for ultralinear applications.

They are characterized for CDMA, CDMA2000, Super3G (3GPP TSG RAN), and WiMAX operation from 2420 to 2480 MHz.

Full gold metallization ensures excellent device lifetime and reliability.

Overview

PTFA241301E PTFA241301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420 – 2480.

Key Features

Thermally-enhanced packaging, Pb-free and RoHS-compliant.
Broadband internal matching.
Typical CDMA2000 performance at 2450 MHz - Average output power = 25 W - Linear Gain = 14 dB - Efficiency = 25%.
Typical CW performance, 2420 MHz, 28 V - Output power at P.
1dB = 140 W - Efficiency = 50%.
Integrated ESD protection: Human Body Model, Class 2 (minimum).
Excellent thermal stability, low HCI drift.
Capable of handling 10:1 VSWR.

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