• Part: PTAC260302FC
  • Description: Thermally-Enhanced High Power RF LDMOS FET
  • Manufacturer: Infineon
  • Size: 438.43 KB
Download PTAC260302FC Datasheet PDF
Infineon
PTAC260302FC
PTAC260302FC is Thermally-Enhanced High Power RF LDMOS FET manufactured by Infineon.
Description The PTAC260302FC is a 30-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. This device integrates a 10-W (main) and a 20-W (peak) transistor, making it ideal for asymmetric Doherty amplifier designs. Features include input matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. ACP Up and ACP Low (d Bc) Drain Efficiency(%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 85 m A, ƒ = 2620, 2655, 2690 MHz, 3GPP WCDMA signal, 10 d B PAR, -10 3.84 MHz bandwidth 60 2620 MHz -20 2655 MHz 2690 MHz -30 40 -40 30 Efficiency -50 ACP Up ACP Low -60 28 c260302f c_gr1 30 32 34 36 38 40 42 44 Average Output Power (d Bm) PTAC260302FC Package H-37248H-4 Featur...