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Infineon Technologies Electronic Components Datasheet

PTAC260302FC Datasheet

Thermally-Enhanced High Power RF LDMOS FET

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PTAC260302FC
Thermally-Enhanced High Power RF LDMOS FET
30 W, 28 V, 2620 – 2690 MHz
Description
The PTAC260302FC is a 30-watt LDMOS FET intended for use in
multi-standard cellular power amplifier applications in the 2620 to
2690 MHz frequency band. This device integrates a 10-W (main)
and a 20-W (peak) transistor, making it ideal for asymmetric Doherty
amplifier designs. Features include input matching, high gain and
thermally-enhanced package with earless flange. Manufactured with
Infineon's advanced LDMOS process, this device provides excellent
thermal performance and superior reliability.
Single-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 85 mA,
ƒ = 2620, 2655, 2690 MHz,
3GPP WCDMA signal, 10 dB PAR,
-10 3.84 MHz bandwidth 60
2620 MHz
-20
2655 MHz
2690 MHz
50
-30 40
-40 30
Efficiency
-50
ACP Up
20
ACP Low
-60
28
c260302f c_gr1
10
30 32 34 36 38 40 42 44
Average Output Power (dBm)
PTAC260302FC
Package H-37248H-4
Features
Asymmetric design
Broadband internal matching
Typical CW performance, 2690 MHz, 28 V
(Doherty configuration, combined output)
- Output power @ P3dB = 30 W
- Efficiency = 54%
- Gain = 13 dB
Typical single-carrier WCDMA performance,
2690 MHz, 28 V, 10 dB PAR
- Output power = 37.5 dBm avg
- Gain = 15.5 dB
- Efficiency = 45%
Capable of handling 10:1 VSWR @ 32 V, 30 W
(CW) output power
Integrated ESD protection
Human Body Model Class 1B (per ANSI/ESDA/
JEDEC JS-001)
Pb-free and RoHS compliant
RF Characteristics
Single-carrier WCDMA Specifications (tested in Infineon Doherty test fixture)
VDD = 28 V, IDQ = 85 mA, VGS1 = 1.1 V, POUT = 5.6 W avg, ƒ = 2690 MHz,
3GPP WCDMA signal, 3.84 MHz channel bandwidth, 10 dB peak/average @ 0.01% CCDF
Characteristic
Symbol Min
Linear Gain
Drain Efficiency
Adjacent Channel Power Ratio
Gps
hD
ACPR
14.5
42
Typ
15.5
45
–27
Max
–25
Unit
dB
%
dBc
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 9
Rev. 04, 2016-06-21


Infineon Technologies Electronic Components Datasheet

PTAC260302FC Datasheet

Thermally-Enhanced High Power RF LDMOS FET

No Preview Available !

PTAC260302FC
DC Characteristics (each side)
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Gate Leakage Current
On-State Resistance (main)
(peak)
Operating Gate Voltage (main)
(peak)
Conditions
VGS = 0 V, IDS = 10 mA
VDS = 28 V, VGS = 0 V
VDS = 63 V, VGS = 0 V
VGS = 10 V, VDS = 0 V
VGS = 10 V, VDS = 0.1 V
VGS = 10 V, VDS = 0.1 V
VDS = 28 V, IDQ = 0.085 A
VDS = 28 V, IDQ = 0 A
Symbol
V(BR)DSS
IDSS
IDSS
IGSS
RDS(on)
RDS(on)
VGS
VGS
Min
65
2
0.4
Typ
0.8
0.6
2.7
1.1
Max
1
10
1
3.5
1.8
Unit
V
µA
µA
µA
W
W
V
V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance
(main)
(peak)
(TCASE 70°C, 30 W CW)
(TCASE 70°C, 30 W CW)
Symbol
VDSS
VGS
TJ
TSTG
RqJC
RqJC
Value
65
–6 to +10
225
–65 to +150
1.5
1.7
Unit
V
V
°C
°C
°C/W
°C/W
Ordering Information
Type and Version Order Code
Package and Description
PTAC260302FC V1 R0 PTAC260302FCV1R0XTMA1 H-37248H-4, Ceramic open-cavity, earless
PTAC260302FC V1 R250 PTAC260302FCV1R250XTMA1 H-37248H-4, Ceramic open-cavity, earless
Shipping
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Data Sheet
2 of 9
Rev. 04, 2016-06-21


Part Number PTAC260302FC
Description Thermally-Enhanced High Power RF LDMOS FET
Maker Infineon
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