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PTAC260302FC - Thermally-Enhanced High Power RF LDMOS FET

Description

The PTAC260302FC is a 30-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band.

This device integrates a 10-W (main) and a 20-W (peak) transistor, making it ideal for asymmetric Doherty amplifier designs.

Features

  • include input matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. ACP Up and ACP Low (dBc) Drain Efficiency(%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 85 mA, ƒ = 2620, 2655, 2690 MHz, 3GPP WCDMA signal, 10 dB PAR, -10 3.84 MHz bandwidth 60 2620 MHz -20 2655 MHz 2690 MHz 50 -30 40 -40 30 Efficiency -50 ACP Up 20 ACP Low -60 28.

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Datasheet Details

Part number PTAC260302FC
Manufacturer Infineon
File Size 438.43 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTAC260302FC Datasheet

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Full PDF Text Transcription

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PTAC260302FC Thermally-Enhanced High Power RF LDMOS FET 30 W, 28 V, 2620 – 2690 MHz Description The PTAC260302FC is a 30-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. This device integrates a 10-W (main) and a 20-W (peak) transistor, making it ideal for asymmetric Doherty amplifier designs. Features include input matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. ACP Up and ACP Low (dBc) Drain Efficiency(%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 85 mA, ƒ = 2620, 2655, 2690 MHz, 3GPP WCDMA signal, 10 dB PAR, -10 3.
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