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Infineon Technologies Electronic Components Datasheet

PTAC210802FC Datasheet

Thermally-Enhanced High Power RF LDMOS FET

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PTAC210802FC
Thermally-Enhanced High Power RF LDMOS FET
80 W, 28 V, 2110 – 2170 MHz
Description
The PTAC210802FC is an 80-watt LDMOS FET with an asymmetrical
design intended for use in multi-standard cellular power amplifier
applications in the 2110 to 2170 MHz frequency band. Features
include dual-path design, input matching, high gain and thermally-
enhanced package with earless flange. Manufactured with Infineon's
advanced LDMOS process, this device provides excellent thermal
performance and superior reliability.
PTAC210802FC
Package H-37248-4
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 100 mA, VGS1 = 1.3 V,
ƒ = 2170 MHz, 3GPP WCDMA signal,
PAR = 8 dB, 10 MHz carrier spacing,
19 BW 3.84 MHz, Doherty Fixture
Efficiency
18
55
50
17 45
16
Gain
40
15 35
14 30
13
c210802fc-gc
25
32 34 36 38 40 42 44 46 48
Output Power (dBm)
Features
• Asymmetrical design
- Main : P1dB = 19 W Typ
- Peak : P1dB = 60 W Typ
• Broadband internal matching
• Wide video bandwidth
• Typical CW pulsed performance, 2170 MHz, 28 V
(Doherty fixture)
- Output power @ P3dB = 75 W
- Efficiency = 48%
- Gain @ P3dB = 14 dB
• Capable of handling 10:1 VSWR @28 V, 80 W
(CW) output power
• Integrated ESD protection : Human Body Model,
Class 1B (per JESD22-A114)
• Low thermal resistance
• Pb-free and RoHS compliant
RF Characteristics
Two-carrier WCDMA Specifications (tested in Infineon Doherty test fixture)
VDD = 28 V, IDQ = 85 mA, VGS1 = 1.3 V, POUT = 5 W avg, ƒ1 = 2165 MHz, ƒ2 = 2175 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF, 10 MHz carrier spacing
Characteristic
Linear Gain
Drain Efficiency
Adjacent Channel Power Ratio
Symbol
Gps
hD
ACPR
Min
15
39
Typ
17
43
–31
Max
–26
Unit
dB
%
dBc
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 8
Rev. 05.2, 2016-06-17


Infineon Technologies Electronic Components Datasheet

PTAC210802FC Datasheet

Thermally-Enhanced High Power RF LDMOS FET

No Preview Available !

PTAC210802FC
DC Characteristics (each side)
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Gate Leakage Current
On-State Resistance (main)
On-State Resistance (peak)
Operating Gate Voltage (main)
Operating Gate Voltage (peak)
Conditions
VGS = 0 V, IDS = 10 mA
VDS = 28 V, VGS = 0 V
VDS = 63 V, VGS = 0 V
VGS = 10 V, IDQ = 0 V
VGS = 10 V, VDS = 0.1 V
VGS = 10 V, VDS = 0.1 V
VDS = 28 V, IDQ = 85 mA
VDS = 28 V, IDQ = 360 mA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (main, TCASE = 70°C, 19 W CW)
Thermal Resistance (peak, TCASE = 70°C, 60 W CW)
Ordering Information
Type and Version
PTAC210802FC V1 R0
PTAC210802FC V1 R250
Order Code
PTAC210802FCV1R0XTMA1
PTAC210802FCV1R250XTMA1
Symbol
V(BR)DSS
IDSS
IDSS
IGSS
RDS(on)
RDS(on)
VGS
VGS
Min
65
2.30
2.35
Typ
0.6
0.19
2.65
2.70
Max
1
10
1
3.0
3.05
Unit
V
µA
µA
V
W
W
V
V
Symbol Value
VDSS
VGS
VDD
TJ
TSTG
RqJC
RqJC
65
–6 to +10
0 to +32
225
–65 to +150
2.5
0.8
Unit
V
V
V
°C
°C
°C/W
°C/W
Package Description
H-37248-4, earless flange
H-37248-4, earless flange
Shipping
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Data Sheet
2 of 8
Rev. 05.2, 2016-06-17


Part Number PTAC210802FC
Description Thermally-Enhanced High Power RF LDMOS FET
Maker Infineon
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