K50EEH5 - High-speed5 IGBT

Infineon

Key Features

C High speed H5 technology offering.
Best-in-Class efficiency in hard switching and resonant topologies.
Plug and play replacement of previous generation IGBTs.
650V breakdown voltage.
Low gate charge QG.
IGBT copacked with full-rated RAPID 1 fast and soft antiparallel diode.
Maximum junction temperature 175°C.
Qualified according to JEDEC for target.

K50EEH5 high-speed5 igbt by Infineon - Datasheet Preview

Datasheet Details

Part number	K50EEH5
Manufacturer	Infineon
File Size	1.87 MB
Description	High-speed5 IGBT
Datasheet	K50EEH5 Datasheet

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Full PDF Text Transcription (Reference)

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IKW50N65EH5 Highspeedseriesfifthgeneration Highspeed5IGBTinTRENCHSTOPTM5technologycopackedwithfull-rated RAPID1fastandsoftantiparalleldiode FeaturesandBenefits: C HighspeedH5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •PlugandplayreplacementofpreviousgenerationIGBTs •650Vbreakdownvoltage •LowgatechargeQG •IGBTcopackedwithfull-ratedRAPID1fastandsoftantiparallel diode •Maximumjunctiontemperature175°C •QualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels: http://www.infineon.