K40T120 igbt equivalent, igbt.
* RDS(on) = 0.041Ω ( Typ.)@ VGS = 10V, ID = 26A
* Low gate charge ( Typ. 49nC)
* Low Crss ( Typ. 66pF)
* Fast switching
* 100% avalanche tested
* .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switchi.
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