ISZ810P06LM datasheet, mosfet equivalent, Infineon

Features and benefits

*P-Channel
*Verylowon-resistanceRDS(on)@VGS=4.5V
*100%avalanchetested
*LogicLevel
*Enhancementmode
*Pb-freeleadplating;RoHScom.

Application

Table1KeyPerformanceParameters Parameter Value Unit VDS -60 V RDS(on),max 81 mΩ ID -19.5 A PG-TSDS.

Description

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