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ISZ810P06LM Datasheet, Infineon

ISZ810P06LM mosfet equivalent, mosfet.

ISZ810P06LM Avg. rating / M : 1.0 rating-11

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ISZ810P06LM Datasheet

Features and benefits


*P-Channel
*Verylowon-resistanceRDS(on)@VGS=4.5V
*100%avalanchetested
*LogicLevel
*Enhancementmode
*Pb-freeleadplating;RoHScom.

Application

Table1KeyPerformanceParameters Parameter Value Unit VDS -60 V RDS(on),max 81 mΩ ID -19.5 A PG-TSDS.

Description

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Image gallery

ISZ810P06LM Page 1 ISZ810P06LM Page 2 ISZ810P06LM Page 3

TAGS

ISZ810P06LM
MOSFET
ISZ-2510
ISZ-500
ISZ-655
Infineon

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