ISZ080N10NM6 datasheet, mosfet equivalent, Infineon

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Features and benefits

*N-channel,normallevel
*Verylowon-resistanceRDS(on)
*ExcellentgatechargexRDS(on)product(FOM)
*Verylowreverserecoverycharge(Qrr)
*.

Application

Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 8.04 mΩ ID 75 A Qoss 35.

Description

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