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ISC088N08NM6 - MOSFET

Description

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Features

  • N-channel, normal level.
  • Very low on-resistance RDS(on).
  • Excellent gate charge x RDS(on) product (FOM).
  • Very low reverse recovery charge (Qrr).
  • Pb-free lead plating; RoHS compliant.
  • Halogen-free according to IEC61249-2-21.
  • Ideal for high frequency switching and synchronous rectification.
  • 175° C operating temperature.
  • High avalanche energy rating Product validation Fully qualified according to JEDEC for Industrial A.

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Full PDF Text Transcription

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ISC088N08NM6 MOSFET OptiMOSTM6Power-Transistor,80V Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Idealforhighfrequencyswitchingandsynchronousrectification •175°Coperatingtemperature •Highavalancheenergyrating Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 80 V RDS(on),max 8.8 mΩ ID 59 A Qoss 26 nC QG(0V...10V) 13.
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