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Infineon Technologies Electronic Components Datasheet

IRL40SC209 Datasheet

Power MOSFET

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Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
IR MOSFET
StrongIRFET™
IRL40SC209
HEXFET® Power MOSFET
  D VDSS
40V
RDS(on) typ.
0.6m
G
max
0.8m
ID (Silicon Limited)
478A
S
ID (Package Limited)
300A
D
Benefits
Optimized for Logic Level Drive
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free*
RoHS Compliant, Halogen-Free
G
Gate
G SSSSSS
D2PAK-7Pin
IRL40SC209
D
Drain
S
Source
Base Part Number
IRL40SC209
Package Type
D2PAK-7Pin
Standard Pack
Form
Quantity
Tape and Reel Left
800
Orderable Part Number
IRL40SC209
5.0
ID = 100A
4.0
3.0
2.0
1.0 TJ = 125°C
0.0
2
TJ = 25°C
4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
1
500
Limited By Package
400
300
200
100
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 2. Maximum Drain Current vs. Case Temperature
2017-05-12


Infineon Technologies Electronic Components Datasheet

IRL40SC209 Datasheet

Power MOSFET

No Preview Available !

  IRL40SC209
Absolute Maximum Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
Pulsed Drain Current 
Maximum Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Avalanche Characteristics 
EAS (Thermally limited) Single Pulse Avalanche Energy 
EAS (Thermally limited) Single Pulse Avalanche Energy 
IAR Avalanche Current
EAR Repetitive Avalanche Energy
Thermal Resistance  
Symbol
Parameter
RJC
RCS
Junction-to-Case 
Case-to-Sink, Flat Greased Surface
RJA Junction-to-Ambient
Max.
478
338
300
1200
375
2.5
± 20
-55 to + 175  
300
728
1404
See Fig 15, 16, 23a, 23b
Typ.
–––
0.50
–––
Max.
0.4
–––
62
Units
A 
W
W/°C
V
°C  
mJ
A
mJ
Units
°C/W  
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
RG Gate Resistance
Min.
40
–––
–––
–––
1.0
–––
–––
–––
–––
–––
Typ.
–––
0.031
0.6
0.8
–––
–––
–––
–––
–––
2.1
Max.
–––
–––
0.8
1.1
2.4
1.0
150
100
-100
–––
Units
V
V/°C
m
V
µA
nA

Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 5mA
VGS = 10V, ID = 100A
VGS = 4.5V, ID = 50A
VDS = VGS, ID = 250µA
VDS = 40 V, VGS = 0V
VDS = 40V,VGS = 0V,TJ =125°C
VGS = 20V
VGS = -20V
Notes:
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 300A. Note that
Current imitations arising from heating of the device leads may occur with some lead mounting arrangements.
(Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.146mH, RG = 50, IAS = 100A, VGS =10V.
ISD 100A, di/dt 954A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
Ris measured at TJ approximately 90°C.
Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 53A, VGS =10V.
Pulse drain current is limited to 1200A by source bonding technology.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques
refer to application note #AN-994: http://www.infineon.com/technical-info/appnotes/an-994.pdf
2 2017-05-12


Part Number IRL40SC209
Description Power MOSFET
Maker Infineon
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IRL40SC209 Datasheet PDF






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