IRFU3710Z-701PbF datasheet, mosfet equivalent, Infineon

Features and benefits

* Advanced Process Technology
* Ultra Low On-Resistance
* 175°C Operating Temperature
* Fast Switching
* Repetitive Avalanche Allowed up to Tjmax
.

Application

SS G GD D- Pak IRFR3710ZPbF I- Pak IRFU3710ZPbF I-Pak Lead form 701 IRFU3710Z-701PbF Refer to page 11 for package o.

Description

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive a.

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