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IRFR3710ZPbF Datasheet, Infineon

IRFR3710ZPbF mosfet equivalent, power mosfet.

IRFR3710ZPbF Avg. rating / M : 1.0 rating-16

datasheet Download (Size : 665.64KB)

IRFR3710ZPbF Datasheet
IRFR3710ZPbF
Avg. rating / M : 1.0 rating-16

datasheet Download (Size : 665.64KB)

IRFR3710ZPbF Datasheet

Features and benefits


* Advanced Process Technology
* Ultra Low On-Resistance
* 175°C Operating Temperature
* Fast Switching
* Repetitive Avalanche Allowed up to Tjmax
.

Application

SS G GD D- Pak IRFR3710ZPbF I- Pak IRFU3710ZPbF I-Pak Lead form 701 IRFU3710Z-701PbF Refer to page 11 for package o.

Description

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive a.

Image gallery

IRFR3710ZPbF Page 1 IRFR3710ZPbF Page 2 IRFR3710ZPbF Page 3

TAGS

IRFR3710ZPbF
Power
MOSFET
Infineon

Manufacturer


Infineon (https://www.infineon.com/)

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