Datasheet4U Logo Datasheet4U.com

IRFI3205PbF Power MOSFET

IRFI3205PbF Description

  * Advanced Process Technology * Ultra Low On-Resistance * Isolated Package * High Voltage Isolation = 2.5KVRMS  * Sink to Lead .
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area.

IRFI3205PbF Applications

* The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mic

📥 Download Datasheet

Preview of IRFI3205PbF PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • IRFI3205PBF - Power MOSFET (International Rectifier)
  • IRFI3205 - Power MOSFET (International Rectifier)
  • IRFI3306G - N-Channel MOSFET (INCHANGE)
  • IRFI3306GPBF - Power MOSFET (International Rectifier)
  • IRFI360 - N-Channel Power MOSFET (International Rectifier)
  • IRFI3710 - Power MOSFET (International Rectifier)
  • IRFI064 - N-Channel Power MOSFET (International Rectifier)
  • IRFI1010 - Power MOSFET (International Rectifier)

📌 All Tags

Power MOSFET Infineon
Infineon IRFI3205PbF-like datasheet