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IRF60R217 - IR MOSFET

Key Features

  • . Avalanche Current vs. Pulse Width 100 TOP Single Pulse BOTTOM 1.0% Duty Cycle 80 ID = 35A 60 40 20 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) Fig 16. Maximum Avalanche Energy vs. Temperature Notes on Repetitive Avalanche Curves, Figures 15, 16: (For further info, see AN-1005 at www. irf. com) 1.Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe oper.

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IR MOSFET StrongIRFET™ IRF60R217 Application  Brushed Motor drive applications  BLDC Motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant power switches  DC/DC and AC/DC converters  DC/AC Inverters  D G S Benefits  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fully Characterized Capacitance and Avalanche SOA  Enhanced body diode dV/dt and dI/dt Capability  Lead-Free, RoHS Compliant G Gate VDSS RDS(on) typ. max ID 60V 8.0m 9.