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IRF150P220
MOSFET
StrongIRFETª
Features
•VerylowRDS(on) •ExcellentgatechargexRDS(on)(FOM) •OptimizedQrr •175°Coperatingtemperature •ProductvalidationaccordingtoJEDECstandard •Optimizedforbroadestavailabilityfromdistributionpartners
Benefits
•Reducedconductionlosses •Idealforhighswitchingfrequency •Lowerovershootvoltage •Increasedreliabilityversus150°Cratedparts •Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 150 V
RDS(on),typ
2.3
mΩ
RDS(on),max
2.7
mΩ
ID(SiliconLimited)
316
A
ID(PackageLimited)
203
A
QG(0V..