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IPTG063N15NM5 - MOSFET

Description

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Features

  • N-channel, normal level.
  • Very low on-resistance RDS(on).
  • Superior thermal resistance.
  • 100% avalanche tested.
  • Pb-free lead plating; RoHS compliant.
  • Halogen-free according to IEC61249-2-21 Product validation Fully qualified according to JEDEC for Industrial.

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Full PDF Text Transcription

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IPTG063N15NM5 MOSFET OptiMOSTM5Power-Transistor,150V Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 150 V RDS(on),max 6.3 mΩ ID 122 A Qoss 139 nC QG 50 nC 1 8 PG-HSOG-8 TAB TAB 8 1 Drain TAB Gate Pin 1 Source Pin 2-8 Type/OrderingCode IPTG063N15NM5 Package PG-HSOG-8 Marking 063N15N5 RelatedLinks - Final Data Sheet 1 Rev.2.1,2023-03-08 OptiMOSTM5Power-Transistor,150V IPTG063N15NM5 TableofContents Description . . . . . . . . . . . . . . . . . . .
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