IPT65R080CFD7 - MOSFET

Description

Features

Ultra-fast body diode.
650V break down voltage.
Best-in-class RDS(on).
Reduced switching losses.
Low RDS(on) dependency over temperature Benefits.
Excellent hard commutation ruggedness.
Extra safety margin for designs with increased bus voltage.
Enabling increased power density solutions.
Outstanding light load efficiency in industrial SMPS.

Infineon

📥 Download Datasheet

Datasheet Details

Part number	IPT65R080CFD7
Manufacturer	Infineon
File Size	1.38 MB
Description	MOSFET
Datasheet	IPT65R080CFD7 Datasheet

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Full PDF Text Transcription

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IPT65R080CFD7 MOSFET 650VCoolMOSªCFD7SJPowerDevice Thelatest650VCoolMOS™CFD7extendsthevoltageclassofferingof theCFD7familyandisasuccessortothe650VCoolMOS™CFD2. Resultingfromimprovedswitchingperformanceandexcellentthermal behavior,650VCooMOS™CFD7offershighestefficiencyinresonant switchingtopologies,suchasLLCandphase-shift-full-bridge(ZVS).As partofInfineon’sfastbodydiodeportfolio,thisnewproductseriesblends alladvantagesofafastswitchingtechnologytogetherwithsuperiorhard commutationrobustness.TheCoolMOS™CFD7technologymeets highestefficiencyandreliabilitystandardsandfurthermoresupportshigh powerdensitysolutions.

Published: Sep 1, 2023 |