IPT026N12NM6 datasheet, mosfet equivalent, Infineon

Features and benefits

* N‑channel, normal level
* Very low on‑resistance RDS(on)
* Excellent gate charge x RDS(on) product (FOM)
* Very low reverse recovery charge (Qrr)
* .

Application

Table 1 Key Performance Parameters Parameter Value Unit VDS 120 V RDS(on),max 2.6 mΩ ID 224 A Qoss 166 n.

Description

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