IPT026N12NM6 Datasheet, Infineon

* N‑channel, normal level
* Very low on‑resistance RDS(on)
* Excellent gate charge x RDS(on) product (FOM)
* Very low reverse recovery charge (Qrr)
* .

Table 1 Key Performance Parameters Parameter Value Unit VDS 120 V RDS(on),max 2.6 mΩ ID 224 A Qoss 166 n.

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

IPT020N10N3

IPT020N13NM6

IPT023N10NM5LF2

IPT025N15NM6

IPT004N03L

IPT007N06N

IPT008N06NM5LF

IPT009N06NM5

IPT012N08N5

IPT015N10N5

IPT039N15N5

IPT059N15N3

IPT067N20NM6