IPP530N15N3G
IPP530N15N3G is Power Transistor manufactured by Infineon.
Features
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max ID
150 V 53 m W 21 A
- 175 °C operating temperature
- Pb-free lead plating; Ro HS pliant; Halogen Free
- Qualified according to JEDEC1) for target application
- Ideal for high-frequency switching and synchronous rectification
- Halogen-free according to IEC61249-2-21
Type
IPB530N15N3 G IPD530N15N3 G IPI530N15N3 G
IPP530N15N3 G
Package Marking
PG-TO263-3 530N15N
PG-TO252-3 530N15N
PG-TO262-3 530N15N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
PG-TO220-3 530N15N
Value
Unit
Continuous drain current
T C=25 °C
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS
I D=18 A, R GS=25 W
Gate source voltage
V GS
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
60 m...
