IPP082N10NF2S
Description
1 Final Data Sheet 2 Rev.2.1,2022-06-14 StrongIRFETTM2Power-Transistor IPP082N10NF2S 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) ID Pulsed drain current3) Avalanche energy, single pulse4) Gate source voltage Power dissipation Operating and storage temperature ID,pulse EAS VGS Ptot Tj,Tstg Min.
Key Features
- Optimizedforawiderangeofapplications
- N-Channel,normallevel
- 100%avalanchetested
- Pb-freeleadplating;RoHSpliant
