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Infineon Technologies Electronic Components Datasheet

IPI530N15N3G Datasheet

Power Transistor

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IPB530N15N3 G IPD530N15N3 G
IPI530N15N3 G IPP530N15N3 G
OptiMOSTM3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary
VDS
RDS(on),max
ID
150 V
53 mW
21 A
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant; Halogen Free
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Type
IPB530N15N3 G IPD530N15N3 G IPI530N15N3 G
IPP530N15N3 G
Package
Marking
PG-TO263-3
530N15N
PG-TO252-3
530N15N
PG-TO262-3
530N15N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
PG-TO220-3
530N15N
Value
Unit
Continuous drain current
ID
T C=25 °C
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS
I D=18 A, R GS=25 W
Gate source voltage
V GS
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
21
A
15
84
60
mJ
±20
V
68
W
-55 ... 175
°C
55/175/56
Rev. 2.6
page 1
2013-07-09


Infineon Technologies Electronic Components Datasheet

IPI530N15N3G Datasheet

Power Transistor

No Preview Available !

IPB530N15N3 G IPD530N15N3 G
IPI530N15N3 G IPP530N15N3 G
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case R thJC
-
Thermal resistance, junction -
ambient
R thJA minimal footprint
-
6 cm2 cooling area3)
-
-
2.2 K/W
-
62
-
40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
150
-
Gate threshold voltage
V GS(th) V DS=V GS, I D=35 µA
2
3
Zero gate voltage drain current
I DSS
V DS=120 V, V GS=0 V,
T j=25 °C
-
0.1
-V
4
1 µA
Gate-source leakage current
V DS=120 V, V GS=0 V,
T j=125 °C
-
I GSS
V GS=20 V, V DS=0 V
-
10
100
1
100 nA
Drain-source on-state resistance
R DS(on) V GS=10 V, I D=18 A
-
44
53 mW
Gate resistance
Transconductance
V GS=8 V, I D=9 A
-
44
53
RG
-
2.1
-W
g fs
|V DS|>2|I D|R DS(on)max,
I D=18 A
11
21
-S
1)J-STD20 and JESD22
2) See figure 3
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.6
page 2
2013-07-09


Part Number IPI530N15N3G
Description Power Transistor
Maker Infineon
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IPI530N15N3G Datasheet PDF






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