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IPI530N15N3G - Power Transistor

Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 150 V 53 mW 21 A.
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant; Halogen Free.
  • Qualified according to JEDEC1) for target.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IPB530N15N3 G IPD530N15N3 G IPI530N15N3 G IPP530N15N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 150 V 53 mW 21 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant; Halogen Free • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 Type IPB530N15N3 G IPD530N15N3 G IPI530N15N3 G IPP530N15N3 G Package Marking PG-TO263-3 530N15N PG-TO252-3 530N15N PG-TO262-3 530N15N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions PG-TO220-3 530N15N Value Unit Continuous drain current
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