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Infineon Technologies Electronic Components Datasheet

IPI50N10S3L-16 Datasheet

Power Transistor

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OptiMOS®-T Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
IPB50N10S3L-16
IPI50N10S3L-16, IPP50N10S3L-16
Product Summary
V DS
R DS(on),max (SMD version)
ID
100 V
15.4 m
50 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB50N10S3L-16
IPI50N10S3L-16
IPP50N10S3L-16
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
3N10L16
3N10L16
3N10L16
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V1)
Pulsed drain current1)
I D,pulse T C=25 °C
Avalanche energy, single pulse1) E AS I D=25A
Avalanche current, single pulse
I AS
Gate source voltage2)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
50
37
200
330
50
±20
100
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.1
page 1
2008-04-09
Free Datasheet http://www.datasheet4u.com/


Infineon Technologies Electronic Components Datasheet

IPI50N10S3L-16 Datasheet

Power Transistor

No Preview Available !

IPB50N10S3L-16
IPI50N10S3L-16, IPP50N10S3L-16
Parameter
Symbol
Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics1)
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient, leaded
R thJA
- - 1.5 K/W
- - 62
SMD version, device on PCB
R thJA
minimal footprint
6 cm2 cooling area3)
-
-
- 62
- 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V (BR)DSS V GS=0 V, I D= 1 mA
V GS(th) V DS=V GS, I D=60µA
I DSS
V DS=80 V, V GS=0 V,
T j=25 °C
100
1.2
-
-
1.7
0.01
-V
2.4
1 µA
V DS=80 V, V GS=0 V,
T j=125 °C2)
-
1 100
Gate-source leakage current
I GSS
V GS=16V, V DS=0V
-
- 100 nA
Drain-source on-state resistance
R DS(on) V GS=4.5V, I D=50A
- 16.1 20.9 m
V GS=4.5V, I D=50A,
SMD version
- 15.8 20.6
V GS=10 V, I D=50 A
- 13.1 15.7
V GS=10 V, I D=50 A,
SMD version
- 12.8 15.4
Rev. 1.1
page 2
2008-04-09
Free Datasheet http://www.datasheet4u.com/


Part Number IPI50N10S3L-16
Description Power Transistor
Maker Infineon
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IPI50N10S3L-16 Datasheet PDF






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