IPD80R2K0P7 - Power-Transistor

Features

Best-in-class FOM RDS(on).
Eoss; reduced Qg, Ciss, and Coss.
Best-in-class DPAK RDS(on).
Best-in-class V(GS)th of 3V and smallest V(GS)th variation of ±0.5V.
Integrated Zener Diode ESD protection.
Fully qualified acc. JEDEC for Industrial.

Infineon

Datasheet Details

Part number	IPD80R2K0P7
Manufacturer	Infineon
File Size	1.12 MB
Description	Power-Transistor
Datasheet	IPD80R2K0P7 Datasheet
Additional preview pages of the IPD80R2K0P7 datasheet.

📁 Similar Datasheet

IPD80R2K8CE - N-Channel MOSFET (INCHANGE)
IPD80R1K0CE - N-Channel MOSFET (INCHANGE)
IPD025N06N - N-Channel MOSFET (INCHANGE)
IPD031N03L - N-Channel MOSFET (INCHANGE)
IPD031N06L3 - N-Channel MOSFET (INCHANGE)
IPD033N06N - N-Channel MOSFET (INCHANGE)
IPD034N06N3 - N-Channel MOSFET (INCHANGE)
IPD036N04L - N-Channel MOSFET (INCHANGE)
IPD038N06N3 - N-Channel MOSFET (INCHANGE)
IPD038N06N3G - Power-Transistor (Infineon Technologies)

Other Datasheets by Infineon

IPD80R2K4P7 - Power-Transistor
IPD80R2K8CE - MOSFET
IPD80R280P7 - MOSFET
IPD80R1K0CE - MOSFET
IPD80R1K2P7 - Power-Transistor
IPD80R1K4CE - MOSFET
IPD80R1K4P7 - MOSFET
IPD80R360P7 - Power-Transistor

Full PDF Text Transcription

Click to expand full text

IPD80R2K0P7 MOSFET 800VCoolMOSªP7PowerTransistor Thelatest800VCoolMOS™P7seriessetsanewbenchmarkin800V superjunctiontechnologiesandcombinesbest-in-classperformancewith stateoftheartease-of-use,resultingfromInfineon’sover18years pioneeringsuperjunctiontechnologyinnovation. Features •Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss •Best-in-classDPAKRDS(on) •Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V •IntegratedZenerDiodeESDprotection •Fullyqualifiedacc.

Published: Sep 6, 2018 |