IPD80R1K4P7
IPD80R1K4P7 is MOSFET manufactured by Infineon.
Features
- Best-in-class FOMRDS(on)- Eoss;reduced Qg,Ciss,and Coss
- Best-in-class DPAKRDS(on)
- Best-in-class V(GS)thof3Vandsmallest V(GS)thvariationof±0.5V
- Integrated Zener Diode ESDprotection
- Fullyqualifiedacc.JEDECfor Industrial Applications
- Fullyoptimizedportfolio
Benefits
- Best-in-classperformance
- Enablinghigherpowerdensitydesigns,BOMsavingsandlower assemblycosts
- Easytodriveandtoparallel
- Betterproductionyieldbyreducing ESDrelatedfailures
- Lessproductionissuesandreducedfieldreturns
- Easytoselectrightpartsforfinetuningofdesigns
Potentialapplications
Remendedforhardandsoftswitchingflybacktopologiesfor LED Lighting,lowpower Chargersand Adapters,Audio,AUXpowerand Industrialpower.Alsosuitablefor PFCstagein Consumerapplications and Solar.
Pleasenote:For MOSFETparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyremended.
Table1Key Performance Parameters
Parameter
Value
Unit
VDS @ Tj=25°C
RDS(on),max
Ω
Qg,typ
10 n C
ID 4 A
Eoss @ 500V
µJ
VGS(th),typ
ESD class (HBM) 2
- Type/Ordering Code IPD80R1K4P7
Package PG-TO 252-3
Marking 80R1K4P7
DPAK tab
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