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IPD50N06S4-09 - Power Transistor

Key Features

  • N-channel - Enhancement mode.
  • AEC qualified.
  • MSL1 up to 260°C peak reflow.
  • 175°C operating temperature.
  • Green Product (RoHS compliant).
  • 100% Avalanche tested IPD50N06S4-09 Product Summary V DS R DS(on),max ID 60 V 9.0 mΩ 50 A PG-TO252-3-11 Type IPD50N06S4-09 Package Marking PG-TO252-3-11 4N0609 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V GS=10V1).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPD50N06S4-09 Product Summary V DS R DS(on),max ID 60 V 9.