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IPD050N10N5 - MOSFET

Description

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Features

  • N-channel, normal level.
  • Excellent gate charge x RDS(on) product (FOM).
  • Very low on-resistance RDS(on).
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

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IPD050N10N5 MOSFET OptiMOSTM5Power-Transistor,100V Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchronousrectification •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 5.0 mΩ ID 80 A QOSS 67 nC QG(0V..10V) 51 nC D-PAK tab 1 2 3 Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Type/OrderingCode IPD050N10N5 Package P-TO252-3 Marking 050N10N5 RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.