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IPD029N04NF2S
MOSFET
StrongIRFETTM2Power-Transistor
Features
•Optimizedforwiderangeofapplications •N-channel,normallevel •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21
Productvalidation
QualifiedaccordingtoJEDECStandard
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
40
V
RDS(on),max
2.9
mΩ
ID
131
A
Qoss
49
nC
QG(0V..10V)
45
nC
D-PAK
tab
1 3
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Type/OrderingCode IPD029N04NF2S
Package PG-TO252-3
Marking 029N04NS
RelatedLinks -
Final Data Sheet
1
Rev.2.0,2022-07-13
StrongIRFETTM2Power-Transistor
IPD029N04NF2S
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .