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IPB530N15N3G - Power Transistor

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Overview

IPB530N15N3 G IPD530N15N3 G IPI530N15N3 G IPP530N15N3 G OptiMOSTM3.

Key Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 150 V 53 mW 21 A.
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant; Halogen Free.
  • Qualified according to JEDEC1) for target.

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