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Infineon Technologies Electronic Components Datasheet

IPB50R299CP Datasheet

Power Transistor

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CoolMOSTM Power Transistor
Features
• Lowest figure of merit RON x Qg
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Pb-free lead plating; RoHS compliant
• Quailfied according to JEDEC1) for target applications
Product Summary
V DS @Tjmax
R DS(on),max
Q g,typ
IPB50R299CP
550 V
0.299
23 nC
PG-TO263
CoolMOS CP is designed for:
• Hard- & Softswitching SMPS topologies
• CCM PFC for Notebook adapter, PDP and large LCD power supplies
• PWM for Notebook adapter, PDP and large LCD power supplies
Type
IPB50R299CP
Package
PG-TO263
Marking
5R299P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
Pulsed drain current2)
I D,pulse
T C=100 °C
T C=25 °C
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
MOSFET dv /dt ruggedness
E AS
E AR
I AR
dv /dt
I D=4.4 A, V DD=50 V
I D=4.4 A, V DD=50 V
V DS=0...400 V
Gate source voltage
V GS static
AC (f>1 Hz)
Power dissipation
Operating and storage temperature
P tot T C=25 °C
T j, T stg
Value
12
8
26
289
0.44
4.4
50
±20
±30
104
-55 ... 150
Unit
A
mJ
A
V/ns
V
W
°C
Rev. 2.1
page 1
2009-02-23
Free Datasheet http://www.datasheet4u.com/


Infineon Technologies Electronic Components Datasheet

IPB50R299CP Datasheet

Power Transistor

No Preview Available !

Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous diode forward current
Diode pulse current2)
Reverse diode dv /dt 4)
Symbol Conditions
IS
I S,pulse
T C=25 °C
dv /dt
IPB50R299CP
Value
6.6
26
15
Unit
A
V/ns
Parameter
Thermal characteristics
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient
R thJA
Soldering temperature, wave- and
reflowsoldering allowed
T sold
SMD version, device
on PCB, minimal
footprint
SMD version, device
on PCB, 6 cm2 cooling
area3)
reflow MSL 1
-
-
-
-
- 1.2 K/W
- 62
35 -
- 260 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
V (BR)DSS V GS=0 V, I D=250 µA
500
V GS(th) V DS=V GS, I D=0.44 mA 2.5
I DSS
I GSS
R DS(on)
RG
V DS=500 V, V GS=0 V,
T j=25 °C
V DS=500 V, V GS=0 V,
T j=150 °C
V GS=20 V, V DS=0 V
V GS=10 V, I D=6.6 A,
T j=25 °C
V GS=10 V, I D=6.6 A,
T j=150 °C
f =1 MHz, open drain
-
-
-
-
-
-
- -V
3 3.5
- 1 µA
10 -
- 100 nA
0.27 0.299
0.68
2.2
-
-
Rev. 2.1
page 2
2009-02-23
Free Datasheet http://www.datasheet4u.com/


Part Number IPB50R299CP
Description Power Transistor
Maker Infineon
PDF Download

IPB50R299CP Datasheet PDF






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