Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous diode forward current
Diode pulse current2)
Reverse diode dv /dt 4)
Symbol Conditions
IS
I S,pulse
T C=25 °C
dv /dt
IPB50R299CP
Value
6.6
26
15
Unit
A
V/ns
Parameter
Thermal characteristics
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient
R thJA
Soldering temperature, wave- and
reflowsoldering allowed
T sold
SMD version, device
on PCB, minimal
footprint
SMD version, device
on PCB, 6 cm2 cooling
area3)
reflow MSL 1
-
-
-
-
- 1.2 K/W
- 62
35 -
- 260 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
V (BR)DSS V GS=0 V, I D=250 µA
500
V GS(th) V DS=V GS, I D=0.44 mA 2.5
I DSS
I GSS
R DS(on)
RG
V DS=500 V, V GS=0 V,
T j=25 °C
V DS=500 V, V GS=0 V,
T j=150 °C
V GS=20 V, V DS=0 V
V GS=10 V, I D=6.6 A,
T j=25 °C
V GS=10 V, I D=6.6 A,
T j=150 °C
f =1 MHz, open drain
-
-
-
-
-
-
- -V
3 3.5
- 1 µA
10 -
- 100 nA
0.27 0.299 Ω
0.68
2.2
-
-Ω
Rev. 2.1
page 2
2009-02-23
Free Datasheet http://www.datasheet4u.com/
