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Infineon Technologies Electronic Components Datasheet

IPB50R199CP Datasheet

Power Transistor

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CoolMOSTM Power Transistor
Features
• Lowest figure of merit RON x Qg
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Pb-free lead plating; RoHS compliant
• Quailfied according to JEDEC1) for target applications
Product Summary
V DS @Tjmax
R DS(on),max
Q g,typ
IPB50R199CP
550 V
0.199
34 nC
PG-TO263
CoolMOS CP is designed for:
• Hard & soft switching SMPS topologies
• CCM PFC for ATX, Notebook adapter, PDP and LCD TV
• PWM for ATX, Notebook adapter, PDP and LCD TV
Type
IPB50R199CP
Package
PG-TO263
Marking
5R199P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
T C=25 °C
Pulsed drain current2)
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
MOSFET dv /dt ruggedness
I D,pulse
E AS
E AR
I AR
dv /dt
T C=100 °C
T C=25 °C
I D=6.6 A, V DD=50 V
I D=6.6 A, V DD=50 V
V DS=0...400 V
Gate source voltage
V GS
static
AC (f>1 Hz)
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
Rev. 2.0
page 1
Value
17
11
40
436
0.66
6.6
50
±20
±30
139
-55 ... 150
Unit
A
mJ
A
V/ns
V
W
°C
2007-11-20


Infineon Technologies Electronic Components Datasheet

IPB50R199CP Datasheet

Power Transistor

No Preview Available !

Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous diode forward current
Diode pulse current2)
Reverse diode dv /dt 4)
IS
I S,pulse
dv /dt
T C=25 °C
IPB50R199CP
Value
9.9
40
15
Unit
A
V/ns
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case R thJC
-
Thermal resistance, junction -
ambient
SMD version, device
R thJA on PCB, minimal
-
footprint
SMD version, device
on PCB, 6 cm2 cooling -
area5)
-
0.9 K/W
-
62
35
-
Soldering temperature,
soldering allowed
wave & reflow
T sold
reflow MSL1
-
-
260 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
500
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=0.66 mA 2.5
3
3.5
Zero gate voltage drain current
I DSS
V DS=500 V, V GS=0 V,
T j=25 °C
-
V DS=500 V, V GS=0 V,
T j=150 °C
-
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=9.9 A,
T j=25 °C
-
Gate resistance
V GS=10 V, I D=9.9 A,
T j=150 °C
-
RG
f =1 MHz, open drain
-
-
1 µA
10
-
-
100 nA
0.18 0.199
0.45
-
2.2
-
Rev. 2.0
page 2
2007-11-20


Part Number IPB50R199CP
Description Power Transistor
Maker Infineon
PDF Download

IPB50R199CP Datasheet PDF






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