Datasheet4U Logo Datasheet4U.com

IPB180N03S4L-01 - Power-Transistor

Features

  • N-channel - Enhancement mode.
  • AEC qualified.
  • MSL1 up to 260°C peak reflow.
  • 175°C operating temperature.
  • Green package (RoHS compliant).
  • Ultra low Rds(on).
  • 100% Avalanche tested Product Summary V DS R DS(on) ID 30 V 1.05 mΩ 180 A PG-TO263-7-3 Type IPB180N03S4L-01 Package PG-TO263-7-3 Marking 4N03L01 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C,.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IPB100N04S2-04 Power-Transistor Infineon Technologies
IPB100N04S2L-03 Power-Transistor Infineon Technologies
IPB100N04S3-03 OptiMOS-T Power-Transistor Infineon Technologies
IPB100N04S4-H2 OptiMOS-T2 Power-Transistor Infineon Technologies
IPB100N06S2-05 Power-Transistor Infineon Technologies

Other Datasheets by Infineon

Part Number Description
IPB180N03S4L-H0 Power-Transistor
IPB180N04S4-00 Power-Transistor
IPB180N04S4-01 Power-Transistor
IPB180N04S4-H0 Power-Transistor
IPB180N04S4L-01 Power-Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IPB180N03S4L-01 OptiMOS™-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested Product Summary V DS R DS(on) ID 30 V 1.
Published: |