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IMWH170R1K0M1 Datasheet, Infineon

IMWH170R1K0M1 mosfet equivalent, 1700v sic trench mosfet.

IMWH170R1K0M1 Avg. rating / M : 1.0 rating-11

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IMWH170R1K0M1 Datasheet

Features and benefits


* VDSS = 1700 V at Tvj = 25°C
* IDDC = 5.4 A at TC = 25°C
* RDS(on) = 1000 mΩ at VGS = 12 V, Tvj = 25°C
* Optimized for fly-back topologies
* 12 V / 0.

Application


* General purpose drives (GPD)
* EV-Charging
* Energy Storage Systems (ESS)
* String inverter
* Unin.

Description

1
  – gate 2
  – drain 3
  – source TO-247 HCC
  – 3Pin 2021-10-27 restricted Copyright © Infineon T Type IMWH170R1K0M1 Package PG-TO247-3-STD-NN4.8 Marking 170M11K0 Datasheet www.infineo.

Image gallery

IMWH170R1K0M1 Page 1 IMWH170R1K0M1 Page 2 IMWH170R1K0M1 Page 3

TAGS

IMWH170R1K0M1
1700V
SiC
Trench
MOSFET
IMWH170R450M1
IMWH170R650M1
IMW120R007M1H
Infineon

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