IMDQ75R090M1H - MOSFET

Description

Features

Highly robust 750V technology, 100% avalanche tested.
Best-in-class RDS(on) x Qfr.
Excellent RDS(on) x Qoss and RDS(on) x QG.
Unique combination of low Crss/Ciss and high VGS(th).
Infineon proprietary die attach technology.
Cutting edge top side cooling package (QDPAK).
Driver source pin available Benefits.
Enhanced robustness and reliability for bus voltages beyond 500 V.
Superior efficiency in hard switching.

Infineon

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Datasheet Details

Part number	IMDQ75R090M1H
Manufacturer	Infineon
File Size	1.29 MB
Description	MOSFET
Datasheet	IMDQ75R090M1H Datasheet
Additional preview pages of the IMDQ75R090M1H datasheet.

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Full PDF Text Transcription

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IMDQ75R090M1H MOSFET CoolSiCªPowerDevice750VG1 PG-HDSOP-22 The750VCoolSiC™isbuiltoverthesolidsiliconcarbidetechnology developedinInfineoninmorethan20years.Leveragingthewidebandgap SiCmaterialcharacteristics,the750VCoolSiC™MOSFEToffersaunique combinationofperformance,reliabilityandeaseofuse.Suitableforhigh temperatureandharshoperations,itenablesthesimplifiedandcost effectivedeploymentofthehighestsystemefficiency.

Published: May 13, 2024 |