IKWH20N65WR6 igbt equivalent, igbt.
* VCE = 650 V
* IC = 20 A
* Pin-to-pin creepage distance > 4.8 mm
* Pin-to-pin clearance distance > 3.4 mm
* Monolithic diode optimized for PFC and we.
* Stable temperature behavior
* Very low VCEsat and low Eoff
* Easy parallel switching capability based on p.
C
Copyright © Infineon T
Type IKWH20N65WR6
G E
Package PG-TO247-3-STD-NN4.8
Marking H20EWR6
Datasheet www.infineon.com
Please read the sections "Important notice" and "Warnings" at the end of this document
Revision 1.10 2022-12-06
IKWH20N65WR.
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