Datasheet Details
| Part number | IKW30N65ES5 |
|---|---|
| Manufacturer | Infineon |
| File Size | 2.00 MB |
| Description | IGBT |
| Datasheet |
 IKW30N65ES5 Datasheet
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Description
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Features
- C High speed S5 technology offering.
- High speed smooth switching device for hard & soft switching.
- Very Low VCEsat, 1.35V at nominal current.
- Plug and play replacement of previous generation IGBTs.
- 650V breakdown voltage.
- Low gate charge QG.
- IGBT copacked with full rated RAPID 1 fast antiparallel diode.
- Maximum junction temperature 175°C.
- Qualified according to JEDEC for target.