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IJW120R100T1 Datasheet, Infineon

IJW120R100T1 transistor equivalent, silicon carbide-junction field effect transistor.

IJW120R100T1 Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 1.14MB)

IJW120R100T1 Datasheet
IJW120R100T1
Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 1.14MB)

IJW120R100T1 Datasheet

Features and benefits


* Ultra fast switching
* Internal fast body diode
* Low intrinsic capacitance
* Low gate charge
* 175 °C maximum operating temperature Gate Drain S.

Application

even more efficient, compact, lighter and cooler. IJW120R100T1 Features
* Ultra fast switching
* Internal fast.

Description

CoolSiC™ is Infineon’s new family of active power switches based on silicon carbide. Combining the excellent material properties of silicon carbide with our normally-on JFET concept allows the next steps towards higher performance paired with very hi.

Image gallery

IJW120R100T1 Page 1 IJW120R100T1 Page 2 IJW120R100T1 Page 3

TAGS

IJW120R100T1
Silicon
Carbide-Junction
Field
Effect
Transistor
Infineon

Manufacturer


Infineon (https://www.infineon.com/)

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IJW120R070T1

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