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IGW40N65H5 - IGBT

Features

  • High speed H5 technology offering.
  • Best-in-Class efficiency in hard switching and resonant topologies.
  • Plug and play replacement of previous generation IGBTs.
  • 650V breakdown voltage.
  • Low gate charge QG.
  • Maximum junction temperature 175°C.
  • Qualified according to JEDEC for target.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IGBT Highspeed5IGBTinTRENCHSTOPTM5technology IGP40N65H5,IGW40N65H5 650VIGBThighspeedswitchingseriesfifthgeneration Datasheet IndustrialPowerControl IGP40N65H5,IGW40N65H5 Highspeedswitchingseriesfifthgeneration Highspeed5IGBTinTRENCHSTOPTM5technology  FeaturesandBenefits: HighspeedH5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •PlugandplayreplacementofpreviousgenerationIGBTs •650Vbreakdownvoltage •LowgatechargeQG •Maximumjunctiontemperature175°C •QualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels: http://www.infineon.
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