IGT65R035D2
Description
2 Revision 1.0 2024‑11‑28 Public CoolGaN™ Transistor 650 V G5 IGT65R035D2 1 at Tj = 25°C, unless otherwise specified.
Key Features
- Enhancement mode transistor
- Ultra‑fast switching
- No reverse‑recovery charge
- Capable of reverse conduction
- Low gate and output charge
- Superior mutation ruggedness
- 2 kV HBM ESD standards
- Normally OFF transistor technology ensures safe operation
- Enables rapid and precise power delivery control
- Improves system efficiency and reliability
